| PART |
Description |
Maker |
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| 2SK3000 |
1000 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon N Channel MOS FET Low Frequency Power Switching
|
Renesas Electronics Corporation
|
| BUZ50B-TO220MR1 BUZ50A-220TM BUZ50A-TO220M BUZ50A- |
6 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
7.5 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
45 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
8 A, 500 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd.
SEMELAB LTD
|
| SML1001R1AN SML1001R3AN SML901R3AN SML901R1AN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 9.5 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| APT10035LFLLG APT10035B2FLL |
Power MOS 7is a new generation of low loss, high voltage, N-Channel
28 A, 1000 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| 2N6660C4 2N6660C4A-JQRS |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
1000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Seme LAB
SEMELAB LTD
|
| BSM191/F |
28 A, 1000 V, 0.42 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INFINEON TECHNOLOGIES AG
|
| APT10026JFLL_03 APT10026JFLL APT10026JFLL03 |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03 |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
